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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/542 DEVICES LEVELS
2N6758
JAN JANTX JANTXV
Symbol VDS VGS TC = +25C ID1 ID2 Ptl Rds(on) Top, Tstg Value 200 20 9 6 75 (1) 0.4 (2) -55 to +150 Unit Vdc Vdc Adc Adc W C
ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Drain - Source Voltage Gate - Source Voltage Continuous Drain Current Continuous Drain Current TC = +100C Max. Power Dissipation TC = +25C Drain to Source On State Resistance Operating & Storage Temperature Note: (1) Derated Linearly by 0.6 W/C for TC > +25C (2) VGS = 10Vdc, ID = 6A ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc Gate-Source Voltage (Threshold) VDS VGS, ID = 0.25mA VDS VGS, ID = 0.25mA, Tj = +125C VDS VGS, ID = 0.25mA, Tj = -55C Gate Current VGS = 20V, VDS = 0V VGS = 20V, VDS = 0V, Tj = +125C Drain Current VGS = 0V, VDS = 160V VGS = 0V, VDS = 160V, Tj = +125C Static Drain-Source On-State Resistance VGS = 10V, ID = 6A pulsed VGS = 10V, ID = 9A pulsed Tj = +125C VGS = 10V, ID = 6A pulsed Diode Forward Voltage VGS = 0V, ID = 9A pulsed T4-LDS-0112 Rev. 2 (092088) Symbol V(BR)DSS VGS(th)1 VGS(th)2 VGS(th)3 IGSS1 IGSS2 IDSS1 IDSS2 rDS(on)1 rDS(on)2 rDS(on)3 VSD Min. 200 2.0 1.0 4.0 5.0 100 200 Max. Unit Vdc
TO-204AA (TO-3) 2N6758
Vdc
nAdc
25 0.25 0.4 0.49 0.8 1.6
Adc mAdc Vdc Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/542
DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Diode Reverse Recovery Time ID = 9A, VGS = 10Vdc, Gate drive impedance = 7.5, VDD = 100Vdc di/dt 100A/s, VDD 30V, IF = 9A Symbol td(on) tr td(off) tf trr Min. Max. 35 80 60 40 500 Unit Symbol Qg(on) Qgs Qgd Min. Max. 39 5.7 20 Unit nC
VGS = 10V, ID = 9A VDS = 160V
ns
ns
T4-LDS-0112 Rev. 2 (092088)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/542
PACKAGE DIMENSIONS
NOTES: 1 2 3 Dimensions are in inches. Millimeters are given for general information only. These dimensions should be measured at points .050 inch (1.27 mm) and .055 inch (1.40 mm) below seating plane. When gauge is not used measurement will be made at the seating plane. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. Mounting holes shall be deburred on the seating plane side. Drain is electrically connected to the case. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. Ltr CD CH HR HR1 HT LD LL LL1 MHD MHS PS PS1 s1
4
5 6 7
Dimensions Inches Millimeters Min Max Min Max .875 22.23 .250 .360 6.35 9.14 .495 .525 12.57 13.34 .131 .188 3.33 4.78 .060 .135 1.52 3.43 .038 .043 0.97 1.09 .312 .500 7.92 12.70 .050 1.27 .151 .161 3.84 4.09 1.177 1.197 29.90 30.40 .420 .440 10.67 11.18 .205 .225 5.21 5.72 .655 .675 16.64 17.15
Notes
3, 5 3, 5
* FIGURE 1. Physical dimensions of transistor (TO-204AA).
T4-LDS-0112 Rev. 2 (092088)
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